Aluminum nitride (C15-1225-212)

General description

Aluminum Nitride(AlN) is a non-oxide semiconductor material with a hexagonal Wurtzite crystal structure. It has a wide direct bandgap of 6.12 eV. AIN is a suitable additive in making thermal grease and electric cable insulation owing to its very high thermal conductivity (300 W/(m. K)) and electrical resistivity. It is also used in microelectronics, electroluminescent devices, and sensors because of its non-toxicity, superior thermal, electrical, mechanical, and chemical properties.

Application

Aluminum Nitride can be used as a:

• ceramic material in the preparation of nano capsulated phase change material for building thermal management systems.
• matrix in the preparation of metacomposites along with graphene platelets to improve their thermal conductive properties.
• foaming agent in the preparation of foam glass using glass waste.