Application Useful for fast and controllable etching of silicon nitride (Si 3 N 4 ), galium nitride (GaN), or aluminum oxide (Al 2 O 3 ). Features and Benefits Etch Rates
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Useful for fast and controllable etching of silicon nitride (Si3N4), galium nitride (GaN), or aluminum oxide (Al2O3).
Etch Rates @ 180 °C:
Aluminum oxide 120 Ã…/min
Silicon nitride 125 Ã…/min
Gallium nitride 80 Ã…/min
Silicon dioxide 1 Ã…/min
Silicon 1 Ã…/min
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