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T299634-25gTetramethyltin.
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T283534-1gApplications:Thallium is used in method for detecting defect of thin film transistor array substrate. Also, used in preparation single-atom catalyst supported on Carbon support.
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T167528-5gThallium(I) hexafluoroacetylacetonate.
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T302908-100gThulium(III) 2,4-pentanedionate is used in low radiation detection for detection badges. It is used luminescence applications, such as halide discharge lamps.
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T302908-1gThulium(III) 2,4-pentanedionate is used in low radiation detection for detection badges. It is used luminescence applications, such as halide discharge lamps.
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T302908-25gThulium(III) 2,4-pentanedionate is used in low radiation detection for detection badges. It is used luminescence applications, such as halide discharge lamps.
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T302908-5gThulium(III) 2,4-pentanedionate is used in low radiation detection for detection badges. It is used luminescence applications, such as halide discharge lamps.
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T141382-1gThin film deposition by atomic layer deposition (ALD):Atomic layer etching:For use in transistors and other integrated circuit components.
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T141382-5gThin film deposition by atomic layer deposition (ALD):Atomic layer etching:For use in transistors and other integrated circuit components.
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T282970-25gTin(II) hexafluoroacetylacetonate.
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T282970-5gTin(II) hexafluoroacetylacetonate.