-
-
H119103-1gHolmium(III) bromide
-
H119103-5gHolmium(III) bromide
-
H119102-1gHolmium(III) fluoride
-
H119102-25gHolmium(III) fluoride
-
H119102-5gHolmium(III) fluoride
-
H350726-250mlHydrobromic acid
-
H350726-50mlHydrobromic acid
-
I347684-1gIndenylzirconium(IV) trichloride
-
I119263-100gInSb is a III-V semiconductor and has a very narrow band gap (170 meV) and high electron mobilitiy, making it a material of interest for high-speed electronics, photovoltaic applications, IR detecting devices, thermoelectrics, and magnetoresistive
-
I119263-1gInSb is a III-V semiconductor and has a very narrow band gap (170 meV) and high electron mobilitiy, making it a material of interest for high-speed electronics, photovoltaic applications, IR detecting devices, thermoelectrics, and magnetoresistive
-
I119263-25gInSb is a III-V semiconductor and has a very narrow band gap (170 meV) and high electron mobilitiy, making it a material of interest for high-speed electronics, photovoltaic applications, IR detecting devices, thermoelectrics, and magnetoresistive