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I119263-5gInSb is a III-V semiconductor and has a very narrow band gap (170 meV) and high electron mobilitiy, making it a material of interest for high-speed electronics, photovoltaic applications, IR detecting devices, thermoelectrics, and magnetoresistive
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I196230-100gInSb is a III-V semiconductor and has a very narrow band gap (170 meV) and high electron mobilitiy, making it a material of interest for high-speed electronics, photovoltaic applications, IR detecting devices, thermoelectrics, and magnetoresistive
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I196230-25gInSb is a III-V semiconductor and has a very narrow band gap (170 meV) and high electron mobilitiy, making it a material of interest for high-speed electronics, photovoltaic applications, IR detecting devices, thermoelectrics, and magnetoresistive
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I196230-5gInSb is a III-V semiconductor and has a very narrow band gap (170 meV) and high electron mobilitiy, making it a material of interest for high-speed electronics, photovoltaic applications, IR detecting devices, thermoelectrics, and magnetoresistive
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I105861-100gIndium chloride tetrahydrate
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I105861-1gIndium chloride tetrahydrate
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I105861-25gIndium chloride tetrahydrate
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I105861-5gIndium chloride tetrahydrate
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I290992-1gIndium(III) iodide is used in chemical research.
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I290992-5gIndium(III) iodide is used in chemical research.
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I105868-250gIndium oxide
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I196229-100gUsed to prepare cage, dinuclear complexes (In-cyclodiphophazanes) which possess interesting metal-metal interactions.