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H107532-500mlSource material for vapor deposition during silicon carbide growth. Silylating reagent for allylic acetates, aryl halides, and diketones.
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H107532-5mlSource material for vapor deposition during silicon carbide growth. Silylating reagent for allylic acetates, aryl halides, and diketones.
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H105443-100mlHexamethyldisiloxane (HMDSO), a linear polydisiloxane, is an organosilicon reagent commonly utilized as a source for plasma enhanced chemical vapor deposition (PE-CVD) of thin films of silicon compounds. It is also employed as a substitute to silane
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H105443-25mlHexamethyldisiloxane (HMDSO), a linear polydisiloxane, is an organosilicon reagent commonly utilized as a source for plasma enhanced chemical vapor deposition (PE-CVD) of thin films of silicon compounds. It is also employed as a substitute to silane
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H105443-500mlHexamethyldisiloxane (HMDSO), a linear polydisiloxane, is an organosilicon reagent commonly utilized as a source for plasma enhanced chemical vapor deposition (PE-CVD) of thin films of silicon compounds. It is also employed as a substitute to silane
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H156956-1gHexaphenylcyclotrisiloxane.
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H156956-5gHexaphenylcyclotrisiloxane.
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H157174-1gHexaphenyldisilane.
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H157174-200mgHexaphenyldisilane.
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H157174-250mgHexaphenyldisilane.
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H157174-5gHexaphenyldisilane.
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H156954-1gHexaphenyldisiloxane.