General description
Atomic number of base material: 14 Silicon
Application
Precursor for the rapid, low temperature deposition of epitaxial silicon and silicon-based dielectrics.
Features and Benefits
Disilane is used for the deposition of amorphous silicon, epitaxial silicon and silicon based dielectrics via rapid low-temperature chemical vapor depsition (LTCVD). Disilane is also used in the epitaxial growth of SiGe films by molecular beam epitaxy (MBE) in conjunction with solid sources of germanium. Precursor for the rapid, low temperature deposition of epitaxial silicon and silicon-based dielectrics.
Shipping Information:
Hazmat Fee: $65.00 + applicable shipping charges are added after the order is placed.
More Information: https://cenmed.com/shipping-returns
- UPC:
- 51342805
- Condition:
- New
- Availability:
- 3-5 Days
- Weight:
- 1.00 Ounces
- HazmatClass:
- Yes
- MPN:
- 463043-20G
- CAS:
- 1590-87-0