Formestane

2,3-Butanedione Monoxime (BDM) is also known as diacetyl monoxime, it is also a nucleophilic agent and it can dephosphorylates acetylcholinesterase poisoned with organophosphates. It is also a well-characterized, non-competitive inhibitor of

2,3-Butanedione Monoxime (BDM) is also known as diacetyl monoxime, it is also a nucleophilic agent and it can dephosphorylates acetylcholinesterase poisoned with organophosphates. It is also a well-characterized, non-competitive inhibitor of

Application 2,3-Butanedione monoxime has been used: in single-molecule myosin V motility assays as an anesthetic in the approach of imaging transgenic animals to reduce rigor tension in muscle fibres as a media component for mice cardiomyocytes

Application 2,3-Butanedione monoxime has been used: in single-molecule myosin V motility assays as an anesthetic in the approach of imaging transgenic animals to reduce rigor tension in muscle fibres as a media component for mice cardiomyocytes

Application 2,3-Butanedione monoxime has been used: in single-molecule myosin V motility assays as an anesthetic in the approach of imaging transgenic animals to reduce rigor tension in muscle fibres as a media component for mice cardiomyocytes

Application 2,3-Butanedione monoxime has been used: in single-molecule myosin V motility assays as an anesthetic in the approach of imaging transgenic animals to reduce rigor tension in muscle fibres as a media component for mice cardiomyocytes

2,4,6,8-Tetramethyl-2,4,6,8-tetrakis(propyl glycidyl ether)cyclotetrasiloxane

Application Reactant for synthesis of ethylhydrosilicone fluids

In the presence of a Pd catalyst, this reagent cross-couples with aryl bromides to give styrene derivatives.

In the presence of a Pd catalyst, this reagent cross-couples with aryl bromides to give styrene derivatives.

Atomic number of base material: 14 Silicon Features and Benefits Precursor for gate dielectrics in thin-film transistors (TFT), and is a component of photochemically formed SiO X monolayers on TiO.

Atomic number of base material: 14 Silicon Features and Benefits Precursor for gate dielectrics in thin-film transistors (TFT), and is a component of photochemically formed SiO X monolayers on TiO.