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GF91742328-1EA
Bismuth (C15-1277-398)
Price: $1,626.86List Price: $1,807.62For updated SDS information please visit www.goodfellow. -
GF91742328-5EA
Bismuth (C15-1277-399)
Price: $6,329.67List Price: $7,032.97For updated SDS information please visit www.goodfellow. -
GF93545466-1EA
Bismuth (C15-1277-400)
Price: $1,193.14List Price: $1,325.71For updated SDS information please visit www.goodfellow. -
GF93545466-5EA
Bismuth (C15-1277-401)
Price: $2,159.34List Price: $2,399.27For updated SDS information please visit www.goodfellow. -
GF93912891-1EA
Bismuth (C15-1277-402)
Price: $2,934.07List Price: $3,260.07For updated SDS information please visit www.goodfellow. -
GF95571995-10EA
Bismuth (C15-1277-403)
Price: $6,510.99List Price: $7,234.43For updated SDS information please visit www.goodfellow. -
GF95571995-1EA
Bismuth (C15-1277-404)
Price: $913.71List Price: $1,015.24For updated SDS information please visit www.goodfellow. -
GF95571995-5EA
Bismuth (C15-1277-405)
Price: $3,560.44List Price: $3,956.04For updated SDS information please visit www.goodfellow. -
1075531-100MG
Bismuth citrate
Price: $788.57List Price: $876.19This product is provided as delivered and specified by the issuing Pharmacopoeia. All information provided in support of this product, including SDS and any product information leaflets have been developed and issued under the Authority of the -
733504-5G
Bismuth selenide
Price: $166.29List Price: $184.76Bismuth selenide (Bi 2 Se 3 ), a thermoelectric material that acts as a topological insulator, exhibits helical spin polarization and strong spin-orbit coupling. Bismuth selenide is a semiconductor thermoelectric material. -
1018780100
BISMUTH(III) NITRATE BASIC FOR ANALYSIS
Price: $284.25List Price: $315.84Analysis Note Assay (complexometric, Bi): ≥ 71.0 % Chloride (Cl): ≤ 0. -
733482-5G
Bismuth(III) telluride
Price: $181.93List Price: $202.14Bismuth(III) telluride (Bi 2 Te 3 ) is a thermoelectric material, which acts as a topological insulator: a quantum material with an insulating bulky gap and gapless edge. It forms thin films by different techniques, which include chemical method,