Pramoxine/zinc oxide

Zinc oxide is a wide-band-gap semiconductor having various technological applications. It is known to exhibit n-type conductivity.

Zinc oxide is a wide-band-gap semiconductor having various technological applications. It is known to exhibit n-type conductivity.

Zinc oxide is a wide-band-gap semiconductor having various technological applications. It is known to exhibit n-type conductivity.

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ZnO is a semiconductor with a wide band gap. Point defects in the structure define the electrical conductivity of the oxide.

ZnO is a semiconductor with a wide band gap. Point defects in the structure define the electrical conductivity of the oxide.

Application Employed in the preparation of NaZnSiO 3 OH, a novel chiral framework material which has potential application in ion exchange, adsorption or catalysis. Employed in the preparation of NaZnSiO 3 OH, a novel chiral framework material

Application Employed in the preparation of NaZnSiO 3 OH, a novel chiral framework material which has potential application in ion exchange, adsorption or catalysis. Employed in the preparation of NaZnSiO 3 OH, a novel chiral framework material

Application Employed in the preparation of NaZnSiO 3 OH, a novel chiral framework material which has potential application in ion exchange, adsorption or catalysis. Employed in the preparation of NaZnSiO 3 OH, a novel chiral framework material

Zinc oxide is a multifunctional material withunique properties such as a high electrochemical coupling coefficient, highchemical stability, a broad range of radiation absorption, andbiocompatibility. It is also a wide band gap (3.

Zinc oxide is a multifunctional material withunique properties such as a high electrochemical coupling coefficient, highchemical stability, a broad range of radiation absorption, andbiocompatibility. It is also a wide band gap (3.

Zinc oxide (ZnO) nanopowder is a metal oxide that is an n-type direct band semiconducting material with a band gap of 3.37 eV.