Radiopharmaceuticals and contrast media

Tin(IV) chloride shows Lewis acid character and is generally used for the synthesis of SnO 2 nanoparticles by sol-gel method. Application Tin(IV) chloride solution can be used for chloromethylation reaction of polysulfones to develop polymer

Tin(IV) chloride shows Lewis acid character and is generally used for the synthesis of SnO 2 nanoparticles by sol-gel method. Application Tin(IV) chloride solution can be used for chloromethylation reaction of polysulfones to develop polymer

Tin(IV) chloride shows Lewis acid character and is generally used for the synthesis of SnO 2 nanoparticles by sol-gel method. Application Tin(IV) chloride solution can be used for chloromethylation reaction of polysulfones to develop polymer

Tin(IV) oxide

Tin(IV) oxide

Tin(IV) oxide (SnO 2 ) is an n-type wide band gap semiconductor with high transmittance at nearIR and visible region. It is scratch resistant and chemically inert.

Tin(IV) oxide (SnO 2 ) is an n-type wide band gap semiconductor with high transmittance at nearIR and visible region. It is scratch resistant and chemically inert.

Tin(IV) oxide (SnO 2 ) is an n-type wide band gap semiconductor with high transmittance at nearIR and visible region. It is scratch resistant and chemically inert.

Tin oxide is n type semiconductor with wide band gap. Thermal stability of tin oxide was studied.

Tin oxide is n type semiconductor with wide band gap. Thermal stability of tin oxide was studied.

Analysis Note Purity (RFA): &#8805 99.0 % Acid soluble matter: &#8804 0.

Analysis Note Purity (RFA): &#8805 99.0 % Acid soluble matter: &#8804 0.