General description
Device configuration:
This Graphene FET chip provides 36 graphene devices distributed in a grid pattern on the chip. 30 devices have Hall-bar geometry and 6 have 2-probe geometry.
The Hall-bar devices can be used for Hall measurements as well as 4-probe and 2-probe measurements. There are graphene channels with varied dimensions to allow systematic investigation of device properties.
Graphene FET chip (GFET-S10 chip) is a graphene based field effect transistor chip with a symmetric transconductance of 8 μS and an operational current density of 105 A/cm2. The fabricated device has a monolayered graphene which is coated by chemical vapor deposition (CVD) on silicon substrate. It also has similar gate insulators in the source and drain.
Application
- Graphene device research
- FET based sensor research for active materials deposited on graphene
- Chemical sensors
- Biosensors
- Bioelectronics
- Magnetic sensors
- Photodetectors
GFET-S10 chip can be used as a biosensor and a chemical sensor for biological applications.
Features and Benefits
Device Features:
- State-of-art graphene FETs utilizing consistent high-quality CVD grown monolayer graphene
- Devices are not encapsulated and can be functionalized by additives
- Perfect platform for sensor research and development
- 36 individual graphene FETs per chip
- Mobilities typically > 1000 cm2/V·s
Caution
Basic handling instructions:The monolayer CVD graphene used in this FET device is highly prone to damage by external factors.
To maintain the quality of the devices, we recommend taking the following precautions:
- Be careful when handling the graphene FET chip.
- Tweezers should not contact the device area directly.
- UPC:
- 60104505
- Condition:
- New
- Weight:
- 1.00 Ounces
- HazmatClass:
- No
- WeightUOM:
- LB
- MPN:
- GRFETS10-1EA
