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S491206-500gGeneral DescriptionFumed silica may be synthesized by high temperature hydrolysis of SiCl 4 in O 2 (N 2 )/H 2 flame. It is amorphous in nature and possesses very high specific area. The micro droplets of amorphous silica fuse into a branch and form
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S432702-250gGeneral DescriptionSilicon carbide (SiC) is a semiconductor based material that consists of a closed packed stacking of double layers of silicon and carbon. It has an excellent thermo-mechanical property that makes it useful in a variety of
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S432703-250gGeneral DescriptionSilicon carbide (SiC) is a semiconducting material with closed packed stacking of double layers of silicon and carbon. It has excellent thermo-mechanical and electrical properties that make it useful in a variety of electronic and
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S433066-100gApplicationSiO 2 is majorly used as a substrate material with excellent thermo-mechanical properties which can be used in a variety of applications which include: vapor deposition, phase deposition, atomic force microscopy probes(AFM), spin coating,
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S433068-25gApplicationSuitable for vacuum deposition.
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S433069-100gApplicationSiO 2 is majorly used as a substrate material with excellent thermo-mechanical properties, which can be used in a variety of applications which include: vapor deposition, phase deposition, atomic force microscopy probes (AFM), spin
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S433070-100gGeneral DescriptionCrystalline silicon dioxide is known as quartz, cristobalite, and tridymite. It forms fused silica when heated above its softening temperature and cooled.1.
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S431223-10gSilicon monoxide.
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S431223-250gSilicon monoxide.
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S431223-50gSilicon monoxide.
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S431224-100gSilicon monoxide.
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S106134-100gSilicon nitride.