Solution & Vapor Deposition Precursors

1H,1H,2H,2H-Perfluorododecyltrichlorosilane.

1H,1H,2H,2H-Perfluorododecyltrichlorosilane.

1H,1H,2H,2H-Perfluorododecyltrichlorosilane.

General DescriptionAtomic number of base material: 14 Silicon.

General DescriptionAtomic number of base material: 14 Silicon.

Application2, 4, 6, 8-Tetramethylcyclotetrasiloxane (TMCTS) is an important precursor for the deposition of polysiloxane, cyclic siloxane, silicon dioxide, oxycarbide thin films with low dielectric constant for microelectronics, semiconductors and

Description3-Glycidoxypropyldimethylethoxysilane was used to functionalize glass substrates to study fluorescence enhancement performance of fabricated photonic crystal sensor. The product could be used for the silanization of hydroxlated Si(100)

3-cyanopropyltriethoxysilane (CPTS) is a trialkoxysilane with a reactive cyanoalkyl group attached to the silicon atom.

3-cyanopropyltriethoxysilane (CPTS) is a trialkoxysilane with a reactive cyanoalkyl group attached to the silicon atom.

3-cyanopropyltriethoxysilane (CPTS) is a trialkoxysilane with a reactive cyanoalkyl group attached to the silicon atom.

3-cyanopropyltriethoxysilane (CPTS) is a trialkoxysilane with a reactive cyanoalkyl group attached to the silicon atom.

5-Norbornen-2-yl(ethyl)chlorodimethylsilane, mixture of endo and exo.