Solution & Vapor Deposition Precursors

Tantalum(V) ethoxide Ta(OC2H5)5 is a tantalum alkoxide that can be used as a precursor in the preparation of tantalum oxide by chemical vapor deposition (CVD). It has excellent volatility and thermal stability. It can be synthesized by anodic

Tantalum(V) ethoxide Ta(OC2H5)5 is a tantalum alkoxide that can be used as a precursor in the preparation of tantalum oxide by chemical vapor deposition (CVD). It has excellent volatility and thermal stability. It can be synthesized by anodic

Tantalum(V) ethoxide Ta(OC2H5)5 is a tantalum alkoxide that can be used as a precursor in the preparation of tantalum oxide by chemical vapor deposition (CVD). It has excellent volatility and thermal stability. It can be synthesized by anodic

Terbium acetate hydrate.

Terbium acetate hydrate.

Terbium acetate hydrate.

DescriptionUsed in the preparation of a new family of monoporphyrinates interesting for their photochemical and magnetic properties and synthetic applications.

Terbium(III) tris(2,2,6,6-tetramethyl-3,5-heptanedionate).

tert-Butyltrichlorosilane.

tert-Butyltrichlorosilane.

Tetraethyl orthosilicate.

Tetraethyl orthosilicate.