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T475961-25gDescriptionAlkyl amides of Hafnium provide a convenient and effective atomic layer deposition precursor to smooth and and amorphous hafnium oxide thin films.Used as precursor for atomic layer deposition of Hafnium Oxide nanolaminates, which are used
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T432630-25gGeneral DescriptionAtomic number of base material: 22 TitaniumApplicationPrecursors Packaged for Depositions Systems.
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B300530-1gTetrakis(dimethylamido)zirconium.
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B300530-250mgTetrakis(dimethylamido)zirconium.
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B300530-5gTetrakis(dimethylamido)zirconium.
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T432279-1gApplicationTetrakis(dimethylamido) zirconium (IV) may be used as a precursor for atomic layer deposition of zirconium which find applications ranging from gas sensors to high-k dielectrics in microelectronics.
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T475960-25gDescriptionAtomic number of base material: 40 ZirconiumPrecursors Packaged for Depositions Systems.
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T432652-25mlTetrakis(ethylmethylamido)hafnium(IV).
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T432652-5mlTetrakis(ethylmethylamido)hafnium(IV).
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T432653-10gGeneral DescriptionAtomic number of base material: 72 HafniumApplicationPrecursors Packaged for Depositions Systems.
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T432233-5g
Aladdin
Tetrakis(ethylmethylamido)zirconium(IV) (C09-1075-174)
Price: $1,029.43List Price: $1,143.81Tetrakis(ethylmethylamido)zirconium(IV). -
T161988-1g
Aladdin
Tetrakis(trifluoro-2,4-pentanedionato)zirconium(IV) (C09-1057-149)
Price: $55.80List Price: $62.00Tetrakis(trifluoro-2,4-pentanedionato)zirconium(IV).