Solution & Vapor Deposition Precursors

DescriptionAtomic number of base material: 40 ZirconiumAdvanced precursor for atomic layer deposition of ZrO2thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor

DescriptionAtomic number of base material: 27 CobaltProduct Describtion:Bis(pentamethylcyclopentadienyl)cobalt(II) is a powerful electron donor that is widely used as a dopant to prepare molecular semiconductors due to its low solid-state ionization

Bis(pentamethylcyclopentadienyl)iron(II)(Me10FeCp2, DecMFc) was used as an electron donor to functionalize high purity graphene with metallic palladium via a redox reaction.

Bis(pentamethylcyclopentadienyl)iron(II)(Me10FeCp2, DecMFc) was used as an electron donor to functionalize high purity graphene with metallic palladium via a redox reaction.

Bis(pentamethylcyclopentadienyl)iron(II)(Me10FeCp2, DecMFc) was used as an electron donor to functionalize high purity graphene with metallic palladium via a redox reaction.

Bis(pentamethylcyclopentadienyl)iron(II)(Me10FeCp2, DecMFc) was used as an electron donor to functionalize high purity graphene with metallic palladium via a redox reaction.

Bis(pentamethylcyclopentadienyl)iron(II)(Me10FeCp2, DecMFc) was used as an electron donor to functionalize high purity graphene with metallic palladium via a redox reaction.

Product classElectronic Materials, Metal based Electronic MaterialsChemical propertiesChemical formulaC12H30N4WEmpirical formulaW(tBuN)2(NMe2)2Molecular weight414.23MetalWTheoretical metal content44Physical stateliquidColorMetal purityyellow99.95.

Bis(tert-butylimino)bis(dimethylamino)tungsten(VI).

General DescriptionAtomic number of base material: 74 TungstenApplicationPrecursor for the deposition of tungsten carbide and -nitride by atomic layer deposition. Precursors Packaged for Depositions Systems.

Bis(tert-butylimino)bis(tert-butylamino)tungsten.

ApplicationNi(PPh 3 ) 2 Cl 2 may be used to undertake nickel assisted phosphination of biaryl O,N triflates with chlorodiphenylphosphine.