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M333153-25gMagnesium aluminate, spinel
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M333153-500gMagnesium aluminate, spinel
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M333153-5gMagnesium aluminate, spinel
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T119195-10gantalum nitride is used to create barrier or glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated"
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T119195-50gantalum nitride is used to create barrier or glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated"
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T336119-1ga tantalum and phosphorous compound used in the study of materials science
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T119216-10gTungsten silicide
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T119216-50gTungsten silicide