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366994-10GApplication 45 μm sized Titanium was used to prepare dense TiC/TiB 2 composite by spark plasma synthesis and Ti-6Al-7Nb alloys.
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366994-50GApplication 45 μm sized Titanium was used to prepare dense TiC/TiB 2 composite by spark plasma synthesis and Ti-6Al-7Nb alloys.
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369489-200GQuantity 22.5 g = 50 × 50 mm 90 g = 100 × 100 mm 200 g = 150 × 150 mm
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369489-90GQuantity 22.5 g = 50 × 50 mm 90 g = 100 × 100 mm 200 g = 150 × 150 mm
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460397-1.5GQuantity 1.5 g = 50 × 50 mm 6.
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460400-11GTitanium (Ti) wire is a semiconductor material that has an energy band gap of ~4.85 eV and an electrical conductivity of ~10 -13 Ω -1 cm -1 .
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460400-2.2GTitanium (Ti) wire is a semiconductor material that has an energy band gap of ~4.85 eV and an electrical conductivity of ~10 -13 Ω -1 cm -1 .
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767506-1EAApplication Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. The extreme miniaturization of components in the semiconductor and electronics industry requires
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GF00253606-1EAFor updated SDS information please visit www.goodfellow.
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GF00558187-1EAFor updated SDS information please visit www.goodfellow.
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GF00621122-10EAFor updated SDS information please visit www.goodfellow.