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204552-10G
TELLURIUM DIOXIDE 99.995% METALS BASIS (C005B-002033)
Price: $253.46List Price: $281.62Application Tellurium dioxide can be used: As a seed layer to fabricate hole-extracting electrodes in an organic photovoltaic device. The addition of TeO 2 enhances the optical transmittance of the electrode. -
204552-50G
TELLURIUM DIOXIDE 99.995% METALS BASIS (C005B-002034)
Price: $669.85List Price: $744.28Application Tellurium dioxide can be used: As a seed layer to fabricate hole-extracting electrodes in an organic photovoltaic device. The addition of TeO 2 enhances the optical transmittance of the electrode. -
397326-5G
TETRAKIS(DIETHYLAMINO)TIN(IV)
Price: $520.99List Price: $578.88Tetrakis(diethylamido)tin(IV) is a volatile compound with four exchangeable ligands. It is widely used as a precursor to produce metal oxide thin films by the chemical vapor deposition method. -
14509-250G-R
TIN >=99% POWDER (C005B-067822)
Price: $243.01List Price: $270.01Application Tin has been used as a precursor for the synthesis of nano-tin oxide which can be deposited on aluminum substrate to be used as an urea sensor. It is generally used for the synthesis of Li/Sn alloys and tin-oxide based electrodes for -
RV010052-500N
Tin (Sn) Standard for AAS, 1000 ppm in 1% HNO3/1% HF, 500mL
Price: $260.33List Price: $289.25Matrix: 1% HNO3/1% HF Min: >= 995 Max: = Manufactured and Tested in an ISO 17025/Guide 34 Accredited Facility -
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