Graphene is a unique one atom thick, two dimensional allotrope of carbon. Among all the synthesis technique, chemical vapor deposition of graphene on various substrates is the most promising route for the large scale production of good quality graphene.Graphene deposited on dielectric surface may exhibit better performance in graphene based FETs. Graphene deposited on SiO2/Si may be deposited by direct chemical vapor deposition via a sacrificial copper film.
Sheet resistance measurements were performed in a vacuum chamber to ensure their reproducibility, within a four-point configuration (van der Pauw geometry, silver paint contact) with injection of currents above 10uA. Specification: 1 cm x 1 cm on SiO₂/Si substrate Related Documents: https://ald-pub-files.oss-cn-shanghai.aliyuncs.com/aladdinsci/pdp/sds/1/M485946-SCI_c821e5f843f059b06a8a8d74ff672d0d.pdf
- UPC:
- 12352002
- Condition:
- New
- Availability:
- 2 weeks
- Weight:
- 0.00 Ounces
- HazmatClass:
- No
- WeightUOM:
- LB
- MPN:
- M485946-4EA
- Product Size:
- 4EA
- Hazard Statement Codes:
- H319:H335:H372
- Precautionary Statement Codes:
- P314:P305+P351+P338
