General description
Atomic number of base material: 73 Tantalum
Features and Benefits
Volatile solid CVD precursor to tantalum nitride (TaN) thin films. Also yields tantalum oxide (Ta2O5) thin films when O2, H2O, NO or H2O2 is present during the deposition process. Ta2O5 thins films show promise as gate dielectric materials in the manufacture of integrated circuits.
- UPC:
- 51434008
- Condition:
- New
- Weight:
- 1.00 Ounces
- HazmatClass:
- No
- WeightUOM:
- LB
- MPN:
- 496863-5G