Application <100> Silicon wafer may be used as a substrate for the epitaxial growth of SiC, and TiN thin films. Packaging 1EA refers to 1 wafer and 5EA refers to 5 wafers Physical properties 0 vortex defects.
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<100> Silicon wafer may be used as a substrate for the epitaxial growth of SiC, and TiN thin films.
1EA refers to 1 wafer and 5EA refers to 5 wafers
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ω•cm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″
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