General description
Tetrakis(dimethylamido)hafnium(IV) is an organometallic compound consisting of a central hafnium atom (Hf) surrounded by four dimethylamido ligands (NMe2). It is commonly used as a CVD/ALD precursor to produce high-quality Hf thin films. It is a solid with low melting point.
Application
Tetrakis(dimethylamido)hafnium(IV) can be used:
- As an atomic layer deposition(ALD) precursor for deposition of hafnium oxide thin films for advanced semiconductor devices.
- As a precursor to fabricate polymer-derived ceramic nanocomposites.
- To prepare HfO2, CeO2, and Ce-doped HfO2 thin films on Ge substrates by using tris(isopropyl-cyclopentadienyl)cerium [Ce(iPrCp)3] precursors with H2O via ALD method.
- To produce Hf3N4 thin films with TDMAH and ammonia at low substrate temperatures at 150−250 °C.
Analysis Note
Purity excludes ~2000 ppm Zr.
- UPC:
- 51284046
- Condition:
- New
- Weight:
- 1.00 Ounces
- HazmatClass:
- No
- WeightUOM:
- LB
- MPN:
- 455199-25G