General description
Atomic number of base material: 40 Zirconium
Application
Zirconium source precursor for good quality MOCVD of PNZT.
Features and Benefits
Precursor for zirconia thin films, with deposition at lower temperatures promoted by Pd(hfac)2, or yttria-stabilized zirconia films on silicon and on stainless steel substrates. Zirconium source precursor for good quality MOCVD of PNZT.
- UPC:
- 51472303
- Condition:
- New
- Availability:
- 3-5 Days
- Weight:
- 1.00 Ounces
- HazmatClass:
- No
- MPN:
- 478865-5G
- CAS:
- 18865-74-2