Solution & Vapor Deposition Precursors

ApplicationTetraethyl orthosilicate (TEOS) is an oxygen containing precursor of Si used for the deposition of: Si oxide Oxycarbide Doped silicate Silanol Siloxane polymer Organosilicon thin films The films can be deposited at low temperatues

Product Describtion:Tetrakis(bromophenyl) silane is an intermediate for emerging hole transport materials based on a silicon core. Materials containing this core have been shown to compete with SpiroMeOTAD for efficiency and stability in perovskite

Product Describtion:Tetrakis(bromophenyl) silane is an intermediate for emerging hole transport materials based on a silicon core. Materials containing this core have been shown to compete with SpiroMeOTAD for efficiency and stability in perovskite

Product Describtion:Tetrakis(bromophenyl) silane is an intermediate for emerging hole transport materials based on a silicon core. Materials containing this core have been shown to compete with SpiroMeOTAD for efficiency and stability in perovskite

Product Describtion:Tetrakis(bromophenyl) silane is an intermediate for emerging hole transport materials based on a silicon core. Materials containing this core have been shown to compete with SpiroMeOTAD for efficiency and stability in perovskite

DescriptionAtomic number of base material: 72 Hafnium.

Tetrakis(diethylamido)tin(IV).

General DescriptionPlease inquire for bulk quantity, pricing, and packaging options.ApplicationPrecursor to titanium nitride (TiN) thin films by organometallic chemical vapor deposition (OMCVD).

General DescriptionPlease inquire for bulk quantity, pricing, and packaging options.ApplicationPrecursor to titanium nitride (TiN) thin films by organometallic chemical vapor deposition (OMCVD).

General DescriptionAtomic number of base material: 22 TitaniumApplicationPrecursors Packaged for Depositions Systems.

Tetrakis(diethylamido)titanium(IV).

General DescriptionPlease inquire for bulk quantity, pricing, and packaging options.