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647543-5EAPhysical properties 0 vortex defects. Etch pitch density (EPD) < 100 (cm -2 ).
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647675-1EAApplication <100> Silicon wafer may be used as a substrate for the epitaxial growth of SiC, and TiN thin films. Packaging 1EA refers to 1 wafer and 5EA refers to 5 wafers Physical properties 0 vortex defects.
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647675-5EAApplication <100> Silicon wafer may be used as a substrate for the epitaxial growth of SiC, and TiN thin films. Packaging 1EA refers to 1 wafer and 5EA refers to 5 wafers Physical properties 0 vortex defects.
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647705-1EAPhysical properties 0 vortex defects. Etch pitch density (EPD) < 100 (cm -2 ).
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647764-1EAPhysical properties 0 vortex defects. Etch pitch density (EPD) < 100 (cm -2 ).
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647772-5EAPhysical properties 0 vortex defects. Etch pitch density (EPD) < 100 (cm -2 ).
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647780-1EAPhysical properties 0 vortex defects. Etch pitch density (EPD) < 100 (cm -2 ).
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647780-5EAPhysical properties 0 vortex defects. Etch pitch density (EPD) < 100 (cm -2 ).
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647799-1EAPhysical properties 0 vortex defects. Etch pitch density (EPD) < 100 (cm -2 ).
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647802-1EAPhysical properties 0 vortex defects. Etch pitch density (EPD) < 100 (cm -2 ).
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GF04814951-1EAFor updated SDS information please visit www.goodfellow.
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GF05482852-1EAFor updated SDS information please visit www.goodfellow.