SILICON WAFER (111) DOPED (P-TYPE) 3 IN. DIAM. (C005B-066186)

Physical properties

0 vortex defects. Etch pitch density (EPD) < 100 (cm^-2). Resistivity 10^-3 - 40 Ωcm

Oxygen content: <= 1~1.8 x 10¹⁸ /cm³; Carbon content: <= 5 x 10¹⁶ /cm³; Boule diameter: 1~8 ″

UPC:

51413400

Condition:

New

Weight:

1.00 Ounces

HazmatClass:

No

Quantity:

5

Unit of Measurement:

EA

MPN:

647772-5EA

CAS:

7440-21-3